PSMN2R7-30PL_1

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Objective data sheet

Rev. 01 — 26 February 2010

7 of 14

NXP Semiconductors

PSMN2R7-30PL

N-channel 30 V 2.7 m

Ω logic level MOSFET

Fig 9.

Drain-source on-state resistance as a function

of gate-source voltage; typical values

Fig 10. Sub-threshold drain current as a function of

gate-source voltage

Fig 11. Gate-source threshold voltage as a function of

junction temperature

Fig 12. Drain-source on-state resistance as a function

of drain current; typical values

003aad412

0

2

4

6

8

10

0

5

10

15

20

(m

Ω)

003aab271

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

01

23

(A)

max

typ

min

003a a c982

0

1

2

3

-60

0

60

120

180

°C)

(V)

max

typ

min

003aad405

0

2

4

6

8

10

0

2040

6080

100

(m

Ω)

3

3.5

10

4.5