PROVISIONAL ISSUE D - AUGUST 2001

ZXMN6A09DN8

4

PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

V

(BR)DSS

60

V

I

Zero Gate Voltage Drain Current

I

DSS

1

µA

V

Gate-Body Leakage

I

GSS

100

nA

V

Gate-Source Threshold Voltage

V

GS(th)

1.0

V

I

D

=250

µA, V

Static Drain-Source On-State Resistance

(1)

R

DS(on)

0.045

0.075

Ω

Ω

V

V

Forward Transconductance (3)

g

fs

15

S

V

DYNAMIC (3)

Input Capacitance

C

iss

1407

pF

V

f=1MHz

Output Capacitance

C

oss

121

pF

Reverse Transfer Capacitance

C

rss

59

pF

SWITCHING(2) (3)

Turn-On Delay Time

t

d(on)

4.9

ns

V

R

(refer to test

circuit)

Rise Time

t

r

5.0

ns

Turn-Off Delay Time

t

d(off)

25.3

ns

Fall Time

t

f

4.6

ns

Gate Charge

Q

g

12.4

nC

V

Total Gate Charge

Q

g

24.2

nC

V

Gate-Source Charge

Q

gs

5.2

nC

Gate-Drain Charge

Q

gd

3.5

nC

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

V

SD

0.85

0.95

V

T

V

Reverse Recovery Time (3)

t

rr

26.3

ns

T

di/dt= 100A/

µs

Reverse Recovery Charge (3)

Q

rr

26.6

nC

NOTES

(1) Measured under pulsed conditions. Width

=300µs. Duty cycle ≤ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.