TPC8403_06 datasheet(4/11 Pages) TOSHIBA

4 / 11 page

TPC8403

2006-11-13

N-channel

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

⎯

±10

μA

Drain cut-OFF current

IDSS

VDS = 30 V, VGS = 0 V

⎯

μA

V (BR) DSS

ID = 10 mA, VGS = 0 V

⎯

Drain-source breakdown voltage

V (BR) DSX

ID = 10 mA, VGS = −20 V

⎯

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

1.3

⎯

2.5

VGS = 4.5 V, ID = 3 A

⎯

Drain-source ON resistance

RDS (ON)

VGS = 10 V, ID = 3 A

⎯

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 3 A

3.9

7.8

⎯

Input capacitance

Ciss

⎯

850

⎯

Reverse transfer capacitance

Crss

⎯

180

⎯

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

⎯

270

⎯

Rise time

⎯

Turn-ON time

ton

⎯

Fall time

⎯

6.5

⎯

Switching time

Turn-OFF time

toff

Duty <= 1%, tw = 10 μs

⎯

Total gate charge

(gate-source plus gate-drain)

⎯

Gate-source charge 1

Qgs1

⎯

Gate-drain (“miller”) charge

Qgd

VDD ∼− 24 V, VGS = 10 V,

ID = 6 A

⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse (Note 1)

IDRP

⎯

Forward voltage (diode)

VDSF

IDR = 6 A, VGS = 0 V

⎯

−1.2

RL =

5.0

VDD ∼− 15 V

0 V

VGS

10 V

ID = 3.0 A

VOUT

TPC8403 Datasheet(PDF) 4 Page - Toshiba Semiconductor

TPC8403 Datasheet(HTML) 4 Page - Toshiba Semiconductor

Html Pages

1 2 3 4 5 6 7 8 9 10 11

Datasheet Download

Link URL