SSM6P41FE datasheet(2/5 Pages) TOSHIBA

2 / 5 page

SSM6P41FE

2009-06-25

Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)

Characteristics

Symbol

Test Conditions

Min

Typ.

Max

Unit

V (BR) DSS ID = -1 mA, VGS = 0 V

-20

⎯

Drain-source breakdown voltage

V (BR) DSX ID = -1 mA, VGS = 8 V

-12

⎯

Drain cutoff current

IDSS

VDS = -20 V, VGS = 0 V

⎯

-10

μA

Gate leakage current

IGSS

VGS = ±8 V, VDS = 0 V

⎯

±1

μA

Gate threshold voltage

Vth

VDS = -3 V, ID = -1 mA

-0.3

⎯

-1.0

Forward transfer admittance

|Yfs|

VDS = -3 V, ID = -400 mA

(Note2)

850

⎯

ID = -400 mA, VGS = -4.5 V

(Note2)

⎯

0.25

0.30

ID = -200 mA, VGS = -2.5 V

(Note2)

⎯

0.34

0.44

ID = -100 mA, VGS = -1.8 V

(Note2)

⎯

0.44

0.67

Drain-source ON-resistance

RDS (ON)

ID = -50 mA, VGS = -1.5 V

(Note2)

⎯

0.55

1.04

Input capacitance

Ciss

⎯

110

⎯

Output capacitance

Coss

⎯

Reverse transfer capacitance

Crss

VDS = -10 V, VGS = 0 V, f = 1 MHz

⎯

Total Gate Charge

⎯

1.76

⎯

Gate

−Source Charge

Qgs

⎯

1.22

⎯

Gate

−Drain Charge

Qgd

VDS = -10 V, IDS= -720 mA

VGS = -4.5 V

⎯

0.54

⎯

Turn-on time

ton

⎯

Switching time

Turn-off time

toff

VDD = -10 V, ID = -100 mA

VGS = 0 to -2.5 V, RG = 50 Ω

⎯

Drain-source forward voltage

VDSF

ID = 720 mA, VGS = 0 V

(Note2)

⎯

0.85

1.2

Note2: Pulse test

Switching Time Test Circuit

ton

90%

10%

−2.5 V

0 V

90%

10%

toff

VDS (ON)

VDD

(b) VIN

VDD = −10 V

RG = 50 Ω

Duty

≤ 1%

VIN: tr, tf < 5 ns

(Zout = 50 Ω)

Common Source

= 25°C

−2.5V

μs

VDD

OUT

(a) Test circuit

SSM6P41FE Datasheet(PDF) 2 Page - Toshiba Semiconductor

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