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ZXMS6005DG Datasheet(PDF) 3 Page - Diodes Incorporated

Part # ZXMS6005DG
Description  60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET??MOSFET
PDF  9 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMS6005DG Datasheet(HTML) 3 Page - Diodes Incorporated

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ZXMS6005DG
Document Number DS32247 Rev. 1 - 2
3 of 9
www.diodes.com
June 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Continuous Drain-Source Voltage
VDS
60
V
Drain-Source Voltage for short circuit protection
VDS(SC)
24
V
Continuous Input Voltage
VIN
-0.5 ... +6
V
Continuous Input Current
-0.2V
≤V
IN≤6V
VIN<-0.2V or VIN>6V
IIN
No limit
│I
IN │≤2
mA
Operating Temperature Range
Tj,
-40 to +150
°C
Storage Temperature Range
Tstg
-55 to +150
°C
Power Dissipation at TA =25°C (a)
Linear Derating Factor
PD
1.3
10.4
W
mW/
°C
Power Dissipation at TA =25°C (b)
Linear Derating Factor
PD
3.0
24
W
mW/
°C
Pulsed Drain Current @ VIN=3.3V
IDM
5
A
Pulsed Drain Current @ VIN=5V
IDM
6
A
Continuous Source Current (Body Diode) (a)
IS
2.5
A
Pulsed Source Current (Body Diode)
ISM
10
A
Unclamped single pulse inductive energy, Tj=25
°C,
ID=0.5A, VDD=24V
EAS
490
mJ
Electrostatic Discharge (Human Body Model)
VESD
4000
V
Charged Device Model
VCDM
1000
V
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
RθJA
96
°C/W
Junction to Ambient (b)
RθJA
42
°C/W
Junction to Case (c)
RθJC
12
°C/W
NOTES
(a) For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in
still air conditions.
(b) For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board, in
still air conditions.
(c) Thermal resistance from junction to the mounting surfaces of the drain pins.



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