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ZXMS6005DT8 Datasheet(PDF) 5 Page - Diodes Incorporated

Part # ZXMS6005DT8
Description  60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET??MOSFET
PDF  9 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMS6005DT8 Datasheet(HTML) 5 Page - Diodes Incorporated

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ZXMS6005DT8
Document Number DS32248 Rev. 1 - 2
5 of 9
www.diodes.com
June 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
CONDITIONS
Static Characteristics
Drain-Source Clamp Voltage
VDS(AZ)
60
65
70
V
ID=10mA
Off state Drain Current
IDSS
1
µA
VDS=12V, VIN=0V
Off state Drain Current
IDSS
2
uA
VDS=36V, VIN=0V
Input Threshold Voltage
VIN(th)
0.7
1
1.5
V
VDS=VGS, ID=1mA
Input Current
IIN
60
100
μA
VIN=+3V
Input Current
IIN
120
200
μA
VIN=+5V
Input Current while over
temperature active
300
μA
VIN=+5V
Static Drain-Source On-State
Resistance
RDS(on)
170
250
m
Ω
VIN=+3V, ID=1A
Static Drain-Source On-State
Resistance
RDS(on)
150
200
m
Ω
VIN=+5V, ID=1A
Continuous Drain Current (a)(e)
ID
1.4
A
VIN=3V; TA=25°C
Continuous Drain Current (a)(e)
ID
1.6
A
VIN=5V; TA=25°C
Continuous Drain Current (a)(d)
ID
1.7
A
VIN=3V; TA=25°C
Continuous Drain Current (a)(d)
ID
1.8
A
VIN=5V; TA=25°C
Current Limit (g)
ID(LIM)
2.2
5
A
VIN=+3V,
Current Limit (g)
ID(LIM)
3.3
7
A
VIN=+5V
Dynamic Characteristics
Turn On Delay Time
td(on)
6
μs
VDD=12V, ID=1A,
VGS=5V
Rise time
tr
14
μs
Turn Off Delay Time
td(off)
34
μs
Fall Time
ff
19
μs
Notes:
(g) The drain current is restricted only when the device is in saturation (see graph ‘typical output
characteristic’). This allows the device to be used in the fully on state without interference from
the current limit. The device is fully protected at all drain currents, as the low power dissipation
generated outside saturation makes current limit unnecessary.



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