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VND670SP Datasheet(PDF) 8 Page - STMicroelectronics

Part # VND670SP
Description  Dual high-side switch with dual Power MOSFET gate driver(bridge configuration)
PDF  20 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

VND670SP Datasheet(HTML) 8 Page - STMicroelectronics

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Electrical specifications
VND670SP
8/20
Table 7.
Protection and diagnostic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VUSD
Undervoltage shutdown
5.5
V
VOV
Overvoltage shutdown
36
43
V
ILIM
Current limitation
30
45
A
TTSD
Thermal shutdown
temperature
VIN = 3.25 V
150
170
200
°C
Vocl
Output turn-off clamp
voltage
ILOAD = 12A, L = 6mH
VCC-
55
VCC-
41
V
Vsat
External MOSFET
saturation voltage
detection threshold
2.5
4.2
5.5
V
Table 8.
PWM
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Vpwl
PWM low level voltage
1.5
V
Ipwl
PWM pin current
Vpw = 1.5V
1
µA
Vpwh
PWM high level voltage
3.25
V
Ipwh
PWM pin current
Vpw = 3.25V
10
µA
Vpwhhyst
PWM hysteresis
voltage
0.5
V
Vpwcl
PWM clamp voltage
Ipw = 1 mA
Ipw = -1 mA
VCC+0.3
-5.0
VCC+0.7
-3.5
VCC+1.0
-2.0
V
V
Vpwtest
Test mode PWM pin
voltage
-3.5
-2.0
-0.5
V
Ipwtest
Test mode PWM pin
current
Vpwtest = -2.0 V
-2000
-500
µA
Table 9.
Logic inputs
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VIL
Input low level voltage
1.5
V
IINL
Input current
VIN = 1.5 V
1
µA
VIH
Input high level voltage
3.25
V
IINH
Input current
VIN = 3.25 V
10
µA
VIHYST
Input hysteresis voltage
0.5
V
VICL
Input clamp voltage
IIN=1mA
IIN=-1mA
6.0
-1.0
6.8
-0.7
8.0
-0.3
V
V



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