STW45NM50FD datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STW45NM50FD

4/12

Doc ID 7955 Rev 10

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

500

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125 °C

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 30 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 22.5 A

0.07

0.10

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS >ID(on) x RDS(on)max

ID = 22.5 A

-20

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f=1 MHz, VGS=0

3600

1260

Coss eq.

(2)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS=0, VDS =0 to 400 V

350

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD= 400 V, ID = 45 A

VGS =10 V

Figure 14

120

Gate input resistance

f=1 MHz Gate DC Bias= 0

test signal level = 20 mV

open drain

-2

Ω

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