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MMSF7P03HDR2G Datasheet(PDF) 2 Page - ON Semiconductor

Part # MMSF7P03HDR2G
Description  Power MOSFET 7 A, 30 V, P?묬hannel SO??
PDF  8 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MMSF7P03HDR2G Datasheet(HTML) 2 Page - ON Semiconductor

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MMSF7P03HD
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 2)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
30
−
−
Vdc
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
−
−
−
−
1.0
25
mAdc
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
−
−
100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
−
−
Vdc
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 5.3 Adc)
(VGS = 4.5 Vdc, ID = 2.0 Adc)
RDS(on)
−
−
26
42
35
50
m
W
Forward Transconductance (VDS = 15 Vdc, ID = 2.5 Adc)
gFS
−
12
−
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 24 Vdc, VGS = 0 V,
f = 1.0 MHz)
Ciss
−
1200
1680
pF
Output Capacitance
Coss
−
580
810
Transfer Capacitance
Crss
−
160
220
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
(VDD = 15 Vdc, ID = 1.0 Adc,
VGS = 4.5 Vdc, RG = 10 W)
td(on)
−
23.5
47
ns
Rise Time
tr
−
42.7
85.4
Turn−Off Delay Time
td(off)
−
57.4
114.8
Fall Time
tf
−
53.6
107.2
Turn−On Delay Time
(VDD = 15 Vdc, ID = 1.0 Adc,
VGS = 10 Vdc, RG = 6.0 W)
td(on)
−
16
32
Rise Time
tr
−
15.2
30.6
Turn−Off Delay Time
td(off)
−
99.7
199.4
Fall Time
tf
−
55.2
110.4
Gate Charge
(See Figure 8)
(VDS = 10 Vdc, ID = 4.9 Adc,
VGS = 6.0 Vdc)
QT
−
37.9
75.8
nC
Q1
−
4.2
−
Q2
−
11.5
−
Q3
−
7.6
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 2.3 Adc, VGS = 0 Vdc)
(IS = 2.3 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
−
−
0.76
0.61
1.2
−
Vdc
Reverse Recovery Time
(IS = 4.9 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
trr
−
47.9
−
ns
ta
−
27
−
tb
−
21
−
Reverse Recovery Stored Charge
QRR
−
0.052
−
mC
2. Negative sign for P−Channel device omitted for clarity.
3. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.



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