NTMFS4837NHT3G datasheet(4/7 Pages) ONSEMI

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NTMFS4837NH

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Figure 1. On−Region Characteristics

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS = 3.2 V

3.8 V

4.0 V

4.2 V

4.4 V to 5.0 V

3.6 V

3.4 V

TJ = 25°C

7 V to 10 V

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 2. Transfer Characteristics

TJ = 25°C

TJ = −55°C

TJ = 125°C

0.003

0.004

0.005

0.006

0.007

0.008

0.009

0.010

0.011

0.012

3.0

4.0

5.0

6.0

7.0

8.0

9.0

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance versus

Gate−to−Source Voltage

ID = 30 A

TJ = 25°C

0.001

0.0015

0.002

0.0025

0.003

0.0035

0.004

0.0045

0.005

0.0055

0.006

0.0065

0.007

0.0075

0.008

0.0085

0.009

0.0095

0.01

10 15 20 25 30 35 40 45 50

VGS = 11.5 V

VGS = 4.5 V

ID, DRAIN CURRENT (A)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

0.6

0.8

1.0

1.2

1.4

1.6

−50 −30 −10 0

60 80 100 120

160

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

ID = 30 A

VGS = 10 V

0.1

100

1000

10000

1015202530

Figure 6. Drain−to−Source Leakage Current

versus Voltage

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS = 0 V

TJ = 150°C

TJ = 125°C

TJ = 25°C

55 60 65 70 75 80 85

TJ = 25°C

0.7

0.9

1.1

1.3

1.5

1.7

100

140

NTMFS4837NHT3G Datasheet(PDF) 4 Page - ON Semiconductor

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