NTMFS4839NHT3G datasheet(4/7 Pages) ONSEMI

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NTMFS4839NH

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Figure 1. On−Region Characteristics

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS = 3.2 V

3.8 V

4.0 V

4.2 V

4.4 V

3.6 V

3.4 V

TJ = 25°C

4.6 V

4.8 V

5.0 V

7.0 V

10 V

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 2. Transfer Characteristics

TC = 25°C

TC = −55°C

TC = 125°C

0.002

0.003

0.004

0.005

0.006

0.007

0.008

0.009

0.01

0.011

0.012

0.013

0.014

0.015

0.016

0.017

0.018

0.019

0.02

3.0

4.0

5.0

6.0

7.0

8.0

9.0

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance versus

Gate−to−Source Voltage

ID = 30 A

TJ = 25°C

0.001

0.0015

0.002

0.0025

0.003

0.0035

0.004

0.0045

0.005

0.0055

0.006

0.0065

0.007

0.0075

0.008

0.0085

0.009

0.0095

0.01

0.0105

0.011

0.0115

0.012

VGS = 11.5 V

VGS = 4.5 V

ID, DRAIN CURRENT (A)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

0.6

0.8

1.2

1.4

1.6

1.8

−55 −35 −15 5

105 125 145

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

ID = 30 A

VGS = 10 V

0.1

100

1000

10000

1015202530

−55 −35 −15 5

105 125 145

Figure 6. Drain−to−Source Leakage Current

versus Voltage

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS = 0 V

TJ = 150°C

TJ = 125°C

TJ = 25°C

NTMFS4839NHT3G Datasheet(PDF) 4 Page - ON Semiconductor

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