NTMFS4841N datasheet(1/7 Pages) ONSEMI

Part #	NTMFS4841N

Description	Power MOSFET 30 V, 57 A, Single N?묬hannel, SO??FL

PDF	7 Pages

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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1 / 7 page

May, 2010 − Rev. 7

1

Publication Order Number:

NTMFS4841N/D

NTMFS4841N

Power MOSFET

30 V, 57 A, Single N−Channel, SO−8FL

Features

• Low RDS(on) to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• These are Pb−Free Devices*

Applications

• Refer to Application Note AND8195/D

• CPU Power Delivery

• DC−DC Converters

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

30

V

Gate−to−Source Voltage

VGS

±20

V

Continuous Drain

Current RqJA

(Note 1) Steady

State

Steady

State

TA = 25°C

ID

13.1

A

TA = 85°C

9.5

Power Dissipation

RqJA (Note 1)

TA = 25°C

PD

2.17

W

TA = 85°C

1.13

Continuous Drain

Current RqJA −

t = 10 sec

TA = 25°C

ID

19.9

A

TA = 85°C

14.4

Power Dissipation

RqJA, t v 10 sec

TA = 25°C

PD

5

W

TA = 85°C

2.6

Continuous Drain

Current RqJA

(Note 2)

TA = 25°C

ID

8.3

A

TA = 85°C

6

Power Dissipation

RqJA (Note 2)

TA = 25°C

PD

0.87

W

TA = 85°C

0.45

Continuous Drain

Current RqJC

(Note 1)

TC = 25°C

ID

57

A

TC = 85°C

41

Power Dissipation

RqJC (Note 1)

TC = 25°C

PD

41.7

W

TC = 85°C

21.7

Pulsed Drain

Current

tp=10ms

TA = 25°C

IDM

171

A

Operating Junction and Storage

Temperature

TJ,

TSTG

−55 to

+150

°C

Source Current (Body Diode)

IS

35

A

Drain to Source dV/dt

dV/dt

6

V/ns

Single Pulse Drain−to−Source Avalanche

Energy (VDD = 24 V, VGS = 10 V,

IL = 19 Apk, L = 1.0 mH, RG = 25 W)

EAS

180

mJ

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

MARKING

DIAGRAM

http://onsemi.com

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

4841N

AYWWG

G

1

V(BR)DSS

RDS(ON) MAX

ID MAX

30 V

7.0 mW @ 10 V

57 A

11.4 mW @ 4.5 V

G (4)

S (1,2,3)

N−CHANNEL MOSFET

D (5,6)

Device

Package

Shipping†

ORDERING INFORMATION

NTMFS4841NT1G

SO−8FL

(Pb−Free)

1500 /

Tape & Reel

NTMFS4841NT3G

SO−8FL

(Pb−Free)

5000 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

S

G

D

*For additional information on our Pb−Free strategy

and soldering details, please download the ON

Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

(Note: Microdot may be in either location)

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