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NTMFS4841NH Datasheet(PDF) 3 Page - ON Semiconductor |
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NTMFS4841NH Datasheet(HTML) 3 Page - ON Semiconductor |
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3 / 7 page ![]() NTMFS4841NH http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Unit Max Typ Min Test Condition Symbol DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 30 A TJ = 25°C 0.86 1.2 V TJ = 125°C 0.71 Reverse Recovery Time tRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A 18.8 ns Charge Time ta 11.4 Discharge Time tb 7.4 Reverse Recovery Charge QRR 6.7 nC PACKAGE PARASITIC VALUES Source Inductance LS TA = 25°C 0.93 nH Drain Inductance LD 0.005 Gate Inductance LG 1.84 Gate Resistance RG 0.90 W 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. |
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