NTMFS4898NF datasheet(3/6 Pages) ONSEMI

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NTMFS4898NF

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Unit

Max

Typ

Min

Test Condition

Symbol

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

td(ON)

VGS = 10 V, VDS = 15 V,

ID = 15 A, RG = 3.0 W

11.3

Rise Time

17.8

Turn−Off Delay Time

td(OFF)

37.3

Fall Time

5.6

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 2.0 A

TJ = 25°C

0.38

0.70

TJ = 125°C

0.31

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 30 A

26.7

Charge Time

13.7

Discharge Time

13.0

Reverse Recovery Charge

QRR

17.3

PACKAGE PARASITIC VALUES

Source Inductance

TA = 25°C

0.65

Drain Inductance

0.20

Gate Inductance

1.5

Gate Resistance

1.4

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

TYPICAL CHARACTERISTICS

4.0 V

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS, GATE−TO−SOURCE VOLTAGE (V)

160

180

200

160

100

120

140

TJ = 25°C

VGS = 4.4 V

10 V

7.5 V

4.2 V

3.8 V

3.6 V

3.4 V

3.2 V

3.0 V

2.8 V

VDS = 10 V

TJ = 25°C

TJ = 125°C

TJ = −55°C

120

140

100

4.5

3.5

2.5

1.5

0.5

4.5

3.5

2.5

1.5

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