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RF2140
Rev A12 011031
2
Application Schematic
Internal Schematic
1
2
3
4
5
13
12
11
10
9
AT_EN
RF IN
GND1
RF OUT
67
8
16
14
15
15 pF
RF IN
15
pF
V
CC
APC
15
pF
V
CC
5.1 pF
Note 1
50
Ωµstrip
1.0 pF
Note 1
15 pF
RF OUT
Quarter wave
length
15 pF
V
CC
1.0 pF
1nF
15pF
Very closetopin 15/16
V
CC
Distance center to
center of
capacitors is
0.220"
Instead of a
stripline an inductor
of ~6 nH can be
used
Instead of a
stripline an
inductor can be
used
Distance between
edge of device
and capacitor is
0.080"
Note: All capacitors are standard
0402 multi layer chip
Note 1: Using a hi-Q capacitor
will increase efficiency slightly
AT_EN
15
pF
15
pF
Distance between
edge of device
and capacitor is
0.240" to improve
the "off" isolation
3.9
Ω
RF IN
VCC
APC1
750
Ω
5k
Ω
500
Ω
2k
Ω
AT_EN
2.5k
Ω
320
Ω
1.5k
Ω
VCC1
GND1
GND2
APC1
500
Ω
2.5k
Ω
VCC
VCC2
RF OUT
APC2
200
Ω
1.5k
Ω
VCC
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