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2-147
2
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
BIAS
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VCC
GND
GND
RF IN
GND
GND
GND
GND
GND
GND
GND
RF OUT
RF OUT
GND
GND
PC
RF2146
PCS LINEAR POWER AMPLIFIER
• 4.8V CDMA PCS Handsets
• 4.8V TDMA PCS Handsets
• 4.8V PACS PCS Handsets
• Driver Amplifier in Cellular Base Stations
• Portable Battery-Powered Equipment
The RF2146 is a high-power, high-efficiency linear ampli-
fier IC. The device is manufactured on an advanced Gal-
lium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in 4-cell CDMA handheld digital cellular equip-
ment, spread-spectrum systems, and other applications
in the 1500MHz to 2000MHz band. The device is self-
contained with 50
Ω input and the output can be easily
matched to obtain optimum power, efficiency, and linear-
ity characteristics.
• Single 4V to 6.5V Supply
• 28.5dBm Linear Output Power
• 18.5dB Gain With Analog Gain Control
• 37% Linear Efficiency
• On-board Power Down Mode
• 1500MHz to 2000MHz Operation
RF2146
PCS Linear Power Amplifier
RF2146 PCBA
Fully Assembled Evaluation Board
2
Rev A3 001026
0.068
0.053
0.244
0.229
0.157
0.150
0.020
0.014
0.020
REF
-A-
0.008
0.004
0.068
0.064
0.393
0.386
0.034
REF
0.034
0.016
8° MAX
0° MIN
0.009
0.007
NOTES:
1. Shaded lead is pin 1.
2. All dimensions are excluding mold flash.
3. Lead coplanarity - 0.004 with respect to datum "A".
4. Max deviation from package center to leadframe center - 0.004.
5. Max misalignment between top center and bottom center - 0.004.
Package Style: CJ2BAT0
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