Preliminary
2-198
RF2161
Rev A3 010514
2
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage (RF off)
+8.0
VDC
Supply Voltage (POUT≤31dBm)
+5.0
VDC
Mode Voltage (VMODE)+3.0
VDC
Control Voltage (VPD)+3.0
VDC
Input RF Power
+6
dBm
Operating Case Temperature
-30 to +100
°C
Storage Temperature
-30 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T=25 °C, VCC=3.4V unless otherwise speci-
fied
Usable Frequency Range
1850
2000
MHz
Typical Frequency Range
1850 to 1910
MHz
1920 to 1980
Linear Gain
28
30
dB
Mode= Low
26
28
dB
Mode= High
Second Harmonic (including
second harmonic trap)
-35
dBc
Third Harmonic
-40
dBc
Fourth Harmonic
-45
dBc
Maximum Linear Output Power
(W-CDMA Modulation)
27
dBm
Total Linear Efficiency
30
35
%
VMODE High, POUT=27dBm
Adjacent Channel Power
Rejection@5MHz
-40
-38
dBc
POUT=27dBm, W-CDMA Modulation
3G PP 3.2 03-00 DPCCH+ 1DPDCH
Adjacent Channel Power
Rejection@10MHz
-50
-48
dBc
POUT=27dBm, W-CDMA Modulation
3G PP 3.2 03-00 DPCCH+1DPDCH
Noise Power
-137
dBm/Hz
POUT=+27dBm, Rx Band 2110MHz to
2170MHz
Maximum Linear Output Power
(W-CDMA Modulation)
26
dBm
VCC=3.0V
Total Linear Efficiency
35
%
Input VSWR
< 2:1
Output Load VSWR
5:1
No oscillations
Power Supply
Power Supply Voltage
3.0
3.4
5.0
V
Idle Current
120
mA
MODE = high
VPD Current
13
mA
Total pins 6 and 8, VPD =2.8 V
Total Current (Power down)
10
10
µAV
PD =low
VPD “Low” Voltage
0
0.2
V
VPD “High” Voltage
2.7
2.8
2.9
V
MODE “High” Voltage
2.5
2.8
MODE “Low” Voltage
0
0.5
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
New Zealand ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
