KM418RD8ACD-RK80 datasheet(58/64 Pages) SAMSUNG

Part #	KM418RD8ACD-RK80

Description	128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

PDF	64 Pages

Scroll/Zoom	100%

Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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58 / 64 page

Page 55

KM416RD8AC(D)/KM418RD8AC(D)

Direct RDRAM™

Rev. 1.01 Oct. 1999

Absolute Maximum Ratings

IDD - Supply Current Profile

Table 23: Absolute Maximum Ratings

Symbol

Parameter

Min

Max

Unit

VI,ABS

Voltage applied to any RSL or CMOS pin with respect to Gnd

- 0.3

VDD+0.3

VDD,ABS, VDDA,ABS

Voltage on VDD and VDDA with respect to Gnd

- 0.5

VDD+1.0

TSTORE

Storage temperature

- 50

100

°C

Table 24: Supply Current Profile

IDD value

RDRAM blocks consuming powera

Max

-45

-800

Max

-45

-711

Max

-53.3

-600

Unit

IDD,PDN

Self-refresh only for INIT.LSR=0

3000

µA

IDD,NAP

T/RCLK-Nap

IDD,STBY

T/RCLK, ROW-demux

105

100

IDD,ATTN

T/RCLK, ROW-demux, COL-demux

165

155

140

IDD,ATTN-W

T/RCLK, ROW-demux,COL-demux,DQ-demux,1

•WR-SenseAmp,

•ACT-Bank

575/625b

525/580

455/500

IDD,ATTN-R

T/RCLK, ROW-demux,COL-demux,DQ-mux,1

•RD-SenseAmp,

•ACT-Bank c

490/520

450/480

400/420

a. The CMOS interface consumes power in all power states.

b. x16/x18 RDRAM data width

c. This does not include the IOL sink current. The RDRAM dissipates IOL

•VOL in each output driver when a logic one is driven.

KM418RD8ACD-RK80 Datasheet(PDF) 58 Page - Samsung semiconductor

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