ABSOLUTE MAXIMUM RATINGS

POWER DISSIPATION RATINGS

THERMAL CHARACTERISTICS

KEY ATTRIBUTES

SN65LVEP11

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

PARAMETER

CONDITION

VALUE

UNIT

Absolute PECL mode supply voltage VCC

6

V

–6

V

PECL mode input voltage

6

V

NECL mode input voltage

–6

V

Continuous

50

mA

Output current

Surge

100

mA

Operating temperature range

–40 to 85

°C

Storage temperature range

–65 to 150

°C

THERMAL RESISTANCE,

DERATING FACTOR

POWER RATING

POWER RATING

CIRCUIT BOARD

JUNCTION TO AMBIENT

PACKAGE

MODEL

NO AIRFLOW

(mW/°C)

(mW)

Low-K

719

139

7

288

SOIC

High-K

840

119

8

336

Low-K

469

213

5

188

SOIC-TSSOP

High-K

527

189

5

211

PARAMETER

PACKAGE

VALUE

UNIT

SOIC

79

°C/W

θ

JB

Junction-to Board Thermal Resistance

SOIC-TSSOP

120

SOIC

98

°C/W

θ

JC

Junction-to Case Thermal Resistance

SOIC-TSSOP

74

CHARACTERISTICS

VALUE

Internal input pull down resistor

75 k

Ω

Internal input pull up resistor

37.5 k

Ω

Moisture sensitivity level

Level 1

Flammability rating (Oxygen Index: 28 to 34)

UL 94 V-0 at 0.125 in

ESD-HBM

4 kV

ESD-machine model

200 V

ESD-charged device model

2 kV

Meets or exceeds JEDEC Spec EIA/JESD78 latchup test

2

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Product Folder Link(s): SN65LVEP11