SST25WF512 datasheet(13/32 Pages) SST

13 / 32 page

Data Sheet

512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash

SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040

S71328-08-000

11/09

Byte-Program

The Byte-Program instruction programs the bits in the

selected byte to the desired data. The selected byte must

be in the erased state (FFH) when initiating a Program

operation. A Byte-Program instruction applied to a pro-

tected memory area will be ignored.

Prior to any Write operation, the Write-Enable (WREN)

instruction must be executed. CE# must remain active low

for the duration of the Byte-Program instruction. The Byte-

Program instruction is initiated by executing an 8-bit com-

mand, 02H, followed by address bits [A23-A0]. Following the

address, the data is input in order from MSB (bit 7) to LSB

(bit 0). CE# must be driven high before the instruction is

executed. The user may poll the Busy bit in the software

status register or wait TBP for the completion of the internal

self-timed Byte-Program operation. See Figure 8 for the

Byte-Program sequence.

FIGURE 8: Byte-Program Sequence

1328 F08.0

CE#

SCK

ADD.

012

ADD.

DIN

HIGH IMPEDANCE

15 16

23 24

31 32

MSB

LSB

MODE 3

MODE 0

MSB

SST25WF512 Datasheet(PDF) 13 Page - Silicon Storage Technology, Inc