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SST26VF016 Datasheet(PDF) 21 Page - Silicon Storage Technology, Inc |
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SST26VF016 Datasheet(HTML) 21 Page - Silicon Storage Technology, Inc |
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21 / 39 page ![]() ©2010 Silicon Storage Technology, Inc. S71359-05-000 06/10 21 Serial Quad I/O (SQI) Flash Memory SST26VF016 / SST26VF032 Data Sheet Page-Program The Page-Program instruction programs up to 256 Bytes of data in the memory. The data for the selected page address must be in the erased state (FFH) before initiating the Page-Program operation. A Page-Program applied to a protected memory area will be ignored. Prior to the program operation, execute the WREN instruction. To execute a Page-Program operation, the host drives CE# low then sends the Page Program com- mand cycle (02H), three address cycles followed by the data to be programmed, then drives CE# high. The programmed data must be between 1 to 256 Bytes and in whole Byte increments; sending an odd number of nibbles will cause the last nibble to be ignored. Each cycle is two nibbles (clocks) long, most significant bit first. Poll the BUSY bit in the Status register or wait TPP for the completion of the internal, self-timed, Page-Program operation. See Figure 18 for the Page-Program sequence. When executing Page-Program, the memory range for the SST26VF016/032 is divided into 256 Byte page boundaries. The device handles shifting of more than 256 Bytes of data by maintaining the last 256 Bytes of data as the correct data to be programmed. If the target address for the Page-Program instruction is not the beginning of the page boundary (A7:A0 are not all zero), and the number of data input exceeds or overlaps the end of the address of the page boundary, the excess data inputs wrap around and will be programmed at the start of that target page. Figure 18:Page-Program Sequence Write-Suspend and Write-Resume Write-Suspend allows the interruption of Sector-Erase, Block-Erase or Page-Program operations in order to erase, program, or read data in another portion of memory. The original operation can be con- tinued with the Write-Resume command. Only one write operation can be suspended at a time; if an operation is already suspended, the device will ignore the Write-Suspend command. Write-Suspend during Chip-Erase is ignored; Chip-Erase is not a valid command while a write is suspended. 1359 F10.0 MODE 3 0 SCK SIO(3:0) CE# C1 C0 MODE 0 2 A5 A4 MSN LSN 4 A3 A2 6 A1 A0 8 H0 L0 10 H1 L1 12 H2 L2 542 HN LN Data Byte 0 Data Byte 1 Data Byte 2 Data Byte 255 Note: MSN = Most Significant Nibble, LSN = Least Significant Nibble C[1:0] = 02H |
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