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IRG4PC50SDPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRG4PC50SDPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 10 page  IRG4PC50SDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES=600V VCE(on) typ. = 1.28V @VGE = 15V, IC = 41A Standard Speed CoPack IGBT Features Standard: Optimized for minimum saturation voltage and low operating frequencies (<1kHz) IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package Benefits Generation -4 IGBT's offer highest efficiencies available IGBT's optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing PD - 97316 E G n-channel C GC E Gate Collector Emitter G C E TO-247AC C Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25°C Continuous Collector Current 70 IC @ TC = 100°C Continuous Collector Current 41 ICM Pulsed Collector Current c 140 ILM Clamped Inductive Load Current d 140 A IF @ TC = 100°C Diode Continous Forward Current 25 IFM Diode Maximum Forward Current e 280 VGE Continuous Gate-to-Emitter Voltage ±20 V PD @ TC = 25°C Maximum Power Dissipation 200 W PD @ TC = 100°C Maximum Power Dissipation 78 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Thermal Resistance Parameter Min. Typ. Max. Units RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.64 RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 0.83 °C/W RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 ––– RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40 1 www.irf.com 04/16/08 |
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