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STF12NM50ND Datasheet(PDF) 5 Page - STMicroelectronics

Part # STF12NM50ND
Description  N-channel 500V, 0.29 OHM, 11A, FDmesh II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF12NM50ND Datasheet(HTML) 5 Page - STMicroelectronics

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STB12NM50ND, STD12NM50ND, STF12NM50ND
Electrical characteristics
Doc ID 14936 Rev 2
5/16
Table 7.
Switching times
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 250 V, ID = 5.5 A,
RG = 4.7 Ω, VGS = 10 V
Figure 18
-
12
15
40
17
-
ns
ns
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
-
11
44
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 11 A, VGS=0
-
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 11 A, di/dt =100 A/µs,
VDD = 100 V
Figure 20
-
122
650
11
ns
nC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VDD = 100 V
di/dt =100 A/µs, ISD = 11 A
Tj = 150 °C,
Figure 20
-
160
940
12
ns
nC
A



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