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MCP1602 Datasheet(PDF) 5 Page - Microchip Technology |
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MCP1602 Datasheet(HTML) 5 Page - Microchip Technology |
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5 / 26 page ![]() © 2007 Microchip Technology Inc. DS22061A-page 5 MCP1602 Output Voltage Tolerance Fixed VOUT -2.5 VR +2.5 % Note 3 Line Regulation VLINE- REG —0.3 — %/V VIN = VR + 1V to 5.5V, IOUT =100 mA Load Regulation VLOAD- REG —0.4 — % VIN =VR +1.5V, ILOAD = 100 mA to 500 mA, Note 1 Internal Oscillator Frequency FOSC 1.6 2.0 2.4 MHz Start Up Time TSS —0.5 — ms TR = 10% to 90% RDSon P-Channel RDSon-P — 450 — m Ω IP =100 mA RDSon N-Channel RDSon-N — 450 — m Ω IN = 100 mA LX Pin Leakage Current ILX -1.0 ±0.01 1.0 µA SHDN =0V, VIN = 5.5V, LX =0V, LX =5.5V Positive Current Limit Threshold +ILX(MAX) — 700 — mA Note 7 Power-Good (PG) Voltage Range VPG 1.0 1.2 —5.5 5.5 VTA = 0°C to +70°C TA = -40°C to +85°C VIN ≤ 2.7V, ISINK = 100 µA PG Threshold High VTH_H —94 96 % of VOUT On Rising VOUT PG Threshold Low VTH_L 89 92 — % of VOUT On Falling VOUT PG Threshold Hysteresis VTH_HYS —2— % of VOUT PG Threshold Tempco ΔV TH/ΔT— 30 — ppm/°C PG Delay tRPD — 165 — µs VOUT =(VTH_H + 100 mV) to (VTH_L - 100 mV) PG Active Time-out Period tRPU 140 262 560 ms VOUT =(VTH_L -100 mV) to (VTH_H +100 mV), ISINK =1.2mA PG Output Voltage Low PG_VOL —— 0.2 VVOUT =VTH_L -100 mV, IPG = 1.2 mA, VIN >2.7V IPG = 100 µA, 1.0 < VIN <2.7V DC CHARACTERISTICS (CONTINUED) Electrical Characteristics: Unless otherwise indicated, V IN = 3.6V, COUT = CIN = 4.7 µF, L = 4.7 µH, VOUT(ADJ) = 1.8V, IOUT = 100 mA, TA = +25°C. Boldface specifications apply for the TA range of -40 oC to +85oC. Parameters Sym Min Typ Max Units Conditions Note 1: The minimum V IN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ VOUT + 0.5V. 2: Reference Feedback Voltage Tolerance applies to adjustable output voltage setting. 3: V R is the output voltage setting. 4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range of 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. 5: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable temperature and the thermal resistance from junction to air (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. 6: The internal MOSFET switches have an integral diode from the L X pin to the VIN pin, and from the LX pin to the GND pin. In cases where these diodes are forward-biased, the package power dissipation limits must be adhered too. Thermal protection is not able to limit the junction temperature for these cases. 7: The current limit threshold is a cycle-by-cycle current limit. |
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