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RU4AM Datasheet(PDF) 1 Page - EIC discrete Semiconductors

Part # RU4AM
Description  FAST RECOVERY RECTIFIERS
PDF  2 Pages
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Manufacturer  EIC [EIC discrete Semiconductors]
Direct Link  http://www.eicsemi.com
Logo EIC - EIC discrete Semiconductors

RU4AM Datasheet(HTML) 1 Page - EIC discrete Semiconductors

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RU4M - RU4AM
FAST RECOVERY RECTIFIERS
PRV : 400 - 600 Volts
Io : 2.0 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
MECHANICAL DATA :
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 1.21 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
RU4M
RU4AM
UNIT
Maximum Peak Reverse Voltage
VRM
400
600
V
Maximum Peak Reverse Surge Voltage
VRSM
400
600
V
Maximum Average Forward Current Ta = 60
°C
IF(AV)
2.0 ( 3.5 With Heatsink )
A
Maximum Peak Forward Surge Current
( 50 Hz, Half-cycle, Sine wave, Single Shot )
Maximum Forward Voltage at IF = 3.5 A
VF
1.3
V
Maximum Reverse Current at VR = VRM
Ta = 25
°C
IR
10
µA
Maximum Reverse Current at VR = VRM
Ta = 100
°C
IR(H)
300
µA
Maximum Reverse Recovery Time (Note 1)
Trr
0.4
µs
Junction Temperature Range
TJ
- 40 to + 150
°C
Storage Temperature Range
TSTG
- 40 to + 150
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 100 mA, IRP = 100 mA.
Page 1 of 2
Rev. 02 : March 25, 2005
RATING
IFSM
70
A
DO-201AD
0.3.75 (9.53)
0.285 (7.24)
0.21 (5.33)
0.19 (4.83)
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
* Pb / RoHS Free


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