STN1NK60Z datasheet(3/16 Pages) STMICROELECTRONICS

3 / 16 page

STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z

Electrical ratings

3/16

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

IPAK

TO-92

SOT-223

VDS

Drain-source voltage (VGS = 0)

600

VGS

Gate-source voltage

± 30

Drain current (continuous) at TC = 25°C

0.8

0.3

Drain current (continuous) at TC=100°C

0.5

0.189

IDM

(1)

Pulse width limited by safe operating area

Drain current (pulsed)

3.2

1.2

PTOT

Total dissipation at TC = 25°C

3.3

Derating factor

0.24

0.25

0.26

W/°C

VESD(G-D)

Gate source ESD(HBM-C=100pF, R=1.5K

Ω)

800

dv/dt(2)

ISD ≤0.3A, di/dt ≤200A/µs, VDD =80%V(BR)DSS

Peak diode recovery voltage slope

4.5

V/ns

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

IPAK

TO-92

SOT-223

Rthj-case

Thermal resistance junction-case Max

°C/W

Rthj-a

Thermal resistance junction-ambient Max

100

120

37.87(1)

When mounted on 1 inch² FR-4 board, 2 Oz Cu

°C/W

Rthj-lead

Thermal resistance junction-lead Max

°C/W

Maximum lead temperature for soldering

purpose

275

260

°C

Table 4.

Avalanche data

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

0.8

EAS

Single pulse avalanche energy

(starting Tj=25°C, Id=Iar, Vdd=50V)

STN1NK60Z Datasheet(PDF) 3 Page - STMicroelectronics

STN1NK60Z Datasheet(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Datasheet Download

Link URL