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STP5NK90Z Datasheet(PDF) 6 Page - STMicroelectronics |
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STP5NK90Z Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 15 page ![]() Obsolete Product(s) - Obsolete Product(s) Electrical characteristics STP5NK90Z - STF5NK90Z 6/15 Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 4.5 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 18 A VSD (2) Forward on voltage ISD = 4.5A, VGS=0 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4.5 A, di/dt = 100 A/µs VDD = 35 V (see Figure 18) 635 5.9 18.5 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4.5 A, di/dt = 100 A/µs VDD = 35 V, Tj = 150 °C (see Figure 18) 712 4.66 13.1 ns µC A |
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