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ST7LNB0V2Y0 Datasheet(PDF) 18 Page - STMicroelectronics |
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ST7LNB0V2Y0 Datasheet(HTML) 18 Page - STMicroelectronics |
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18 / 30 page ![]() Electrical characteristics ST7LNB0V2Y0 18/30 6.4 Supply current characteristics The following current consumption specified for the ST7 functional operating modes over temperature range does not take into account the clock source current consumption. To get the total device consumption, the two current values must be added. Figure 6. Typical IDD in Run vs. fCPU 6.5 EMC characteristics Susceptibility tests are performed on a sample basis during product characterization. 6.5.1 Functional EMS (electromagnetic susceptibility) Based on a simple running application on the product (toggling 2 LEDs through I/O ports), the product is stressed by two electromagnetic events until a failure occurs (indicated by the LEDs). ● ESD: Electrostatic discharge (positive and negative) is applied on all pins of the device until a functional disturbance occurs. This test conforms with the IEC 1000-4-2 standard. ● FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and VSS through a 100pF capacitor, until a functional disturbance occurs. This test conforms with the IEC 1000-4-4 standard. A device reset allows normal operations to be resumed. The test results are given in the table below based on the EMS levels and classes defined in application note AN1709. Table 16. Supply current(1) 1. TA = -40 to +125 °C unless otherwise specified. Symbol Parameter Conditions Typ Max Unit IDD Supply current in Run mode(2) 2. CPU running with memory access, all I/O pins in input mode with a static value at VDD or VSS (no load), all peripherals in reset state; clock input (CLKIN) driven by external square wave, LVD disabled. VDD=5.5V, fCPU=8MHz 4.50 7 mA Supply current for LNB or switcher applications(3) 3. Data based on typical ST7LNB0V2Y0 LNB or switcher application software running. 20 0.0 1.0 2.0 3.0 4.0 5.0 2.4 2.7 3.7 4.5 5 5.5 Vdd (V) 8MHz 4MHz 1MHz |
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