STP4N150 datasheet(1/15 Pages) STMICROELECTRONICS

Part #	STP4N150

Description	N-channel 1500 V, 5 Ω, 4 A, PowerMESH??Power MOSFET in TO-220, TO-247, TO-3PF

PDF	15 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 15 page

July 2009

Doc ID 11262 Rev 9

1/15

15

STFW4N150

STP4N150, STW4N150

N-channel 1500 V, 5

Ω, 4 A, PowerMESH™ Power MOSFET

in TO-220, TO-247, TO-3PF

Features

■ 100% avalanche tested

■ Intrinsic capacitances and Qg minimized

■ High speed switching

■ Fully isolated TO-3PF plastic packages

■ Creepage distance path is 5.4 mm (typ.) for

TO-3PF

Application

■ Switching applications

Description

Using the well consolidated high voltage MESH

OVERLAY™ process, STMicroelectronics has

designed an advanced family of very high voltage

Power MOSFETs with outstanding performances.

The strengthened layout coupled with the

company’s proprietary edge termination structure,

gives the lowest RDS(on) per area, unrivalled gate

charge and switching characteristics.

Figure 1.

Internal schematic diagram.

Type

VDSS

RDS(on) max

ID

Pw

STFW4N150

1500 V

< 7

Ω

4 A

63 W

STP4N150

1500 V

< 7

Ω

4 A

160 W

STW4N150

1500 V

< 7

Ω

4 A

160 W

TO-220

TO-247

1

2

3

1

2

3

1

2

3

TO-3PF

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STFW4N150

4N150

TO-3PF

Tube

STP4N150

P4N150

TO-220

Tube

STW4N150

W4N150

TO-247

Tube

www.st.com

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