STF11NM60N datasheet(5/20 Pages) STMICROELECTRONICS

Part #	STF11NM60N

Description	N-channel 600 V, 0.37 Ω, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK

PDF	20 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 20 page

STx11NM60N

Electrical characteristics

5/20

2.1

Electrical characteristics (curves)

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 300 V, ID = 5 A,

RG = 4.7 Ω, VGS = 10 V

Figure 18

Figure 23

18.5

Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ISD

ISDM

Source-drain current

Source-drain current (pulsed)

VSD

(1)

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward on voltage

ISD = 10 A, VGS=0

1.3

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD =10 A, di/dt =100 A/µs,

VDD =100 V

Figure 20

340

3.26

19.2

µC

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

VDD =100 V

di/dt =100 A/µs, ISD = 10 A

TJ = 150 °C Figure 20

460

4.42

19.2

µC

Figure 2.

Safe operating area for TO-220,

I²PAK, D²PAK

Figure 3.

Thermal impedance for TO-220,

I²PAK, D²PAK

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