STF23NM60ND datasheet(1/18 Pages) STMICROELECTRONICS

Part #	STF23NM60ND

Description	N-channel 600 V, 0.150 Ω, 19.5 A, FDmesh??II Power MOSFET (with fast diode) D²PAK, I²PAK, TO-220, TO-220FP, TO-247

PDF	18 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 18 page

October 2010

Doc ID 14367 Rev 3

1/18

18

STx23NM60ND

N-channel 600 V, 0.150

Ω, 19.5 A, FDmesh™ II Power MOSFET

(with fast diode) D²PAK, I²PAK, TO-220, TO-220FP, TO-247

Features

■ The worldwide best RDS(on) * area amongst the

fast recovery diode devices

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

■ High dv/dt and avalanche capabilities

Application

Switching applications

Description

The device is an N-channel FDmesh™ II Power

MOSFET that belongs to the second generation

of MDmesh™ technology. This revolutionary

Power MOSFET associates a new vertical

structure to the company's strip layout and

associates all advantages of reduced on-

resistance and fast switching with a n intrinsic

fast-recovery body diode.It is therefore strongly

recommended for bridge topologies, in particular

ZVS phase-shift converters.

Figure 1.

Internal schematic diagram

Type

VDSS

(@Tjmax)

RDS(on)

max.

ID

STx23NM60ND

650 V

< 0.180

Ω

19.5 A

TO-220

TO-220FP

I²PAK

1

2

3

1

2

3

1

2

3

1

2

3

TO-247

D²PAK

1

3

Table 1.

Device summary

Part number

Marking

Package

Packaging

STB23NM60ND

23NM60ND

D²PAK

Tape and reel

STI23NM60ND

23NM60ND

I²PAK

Tube

STF23NM60ND

23NM60ND

TO-220FP

Tube

STP23NM60ND

23NM60ND

TO-220

Tube

STW23NM60ND

23NM60ND

TO-247

Tube

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STF23NM60ND Datasheet(PDF) 1 Page - STMicroelectronics

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