BSC200P03LSG datasheet(3/9 Pages) INFINEON

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BSC200P03LS G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

1830

2430

Output capacitance

C oss

569

757

Reverse transfer capacitance

C rss

460

690

Turn-on delay time

t d(on)

Rise time

t r

-33

Turn-off delay time

t d(off)

-34

Fall time

t f

-18

Gate Charge Characteristics

Gate to source charge

Q gs

-4.8

-6.5

Gate charge at threshold

Q g(th)

-2.6

-3.5

Gate to drain charge

Q gd

-13.6

-20.4

Switching charge

Q sw

-15.8

-23.3

Gate charge total

Q g

-36.4

-48.5

Gate plateau voltage

V plateau

-2.6

Output charge

Q oss

V DD=-15 V, V GS=0 V

10.2

13.5

Reverse Diode

Diode continous forward current

I S

-12.5

Diode pulse current

I S,pulse

-50

Diode forward voltage

V SD

V GS=0 V, I F=-12.5 A,

T j=25 °C

-0.9

-1.2

Reverse recovery time

t rr

V R=15 V, I F=|I S|,

di F/dt =100 A/µs

-22-

Reverse recovery charge

Q rr

-11-

T C=25 °C

Values

V GS=0 V, V DS=-15 V,

f =1 MHz

V DD=-15 V, V GS=-

10 V, I D=-10 A,

R G=6 Ω

V DD=-24 V,

I D=-12.5 A, V GS=0 to -

10 V

Rev. 1.04

page 3

2009-02-18

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