SPD15P10PLG datasheet(3/10 Pages) INFINEON

Part #	SPD15P10PLG

Description	SIPMOS짰 Power-Transistor Features P-Channel Enhancement mode

PDF	10 Pages

Scroll/Zoom	100%

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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3 / 10 page

SPP15P10PL G

SPD15P10PL G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

1120

1490

Output capacitance

C oss

272

362

Reverse transfer capacitance

C rss

120

180

Turn-on delay time

t d(on)

7.6

Rise time

t r

-21

Turn-off delay time

t d(off)

-50

Fall time

t f

-29

Gate Charge Characteristics

Gate to source charge

Q gs

4.3

5.7

Gate to drain charge

Q gd

-17

Gate charge total

Q g

-47

Gate plateau voltage

V plateau

4.0

Reverse Diode

Diode continuous forward current

I S

-15

Diode pulse current

I S,pulse

-60

Diode forward voltage

V SD

V GS=0 V, I F=-15 A,

T j=25 °C

-0.96

-1.35

Reverse recovery time

t rr

110

165

Reverse recovery charge

Q rr

450

675

2) See figure 16 for gate charge parameter definition

T C=25 °C

Values

V GS=0 V, V DS=-25 V,

f =1 MHz

V DD=-50 V, V GS=-

10 V, I D=-15 A,

R G=6 Ω

V DD=-80 V, I D=-15 A,

V GS=0 to -10 V

V R=50 V, I F=|I S|,

di F/dt =100 A/µs

Rev 1.3

page 3

2009-10-27

SPD15P10PLG Datasheet(PDF) 3 Page - Infineon Technologies AG

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