Electronic Components Datasheet Search
  New Zealand  ▼
ALLDATASHEET.CO.NZ

X  

SPP07N60CFD Datasheet(PDF) 2 Page - Infineon Technologies AG

Part # SPP07N60CFD
Description  CoolMOSTM Power Transistor Features Intrinsic fast-recovery body diode
PDF  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPP07N60CFD Datasheet(HTML) 2 Page - Infineon Technologies AG

  SPP07N60CFD Datasheet HTML 1Page - Infineon Technologies AG SPP07N60CFD Datasheet HTML 2Page - Infineon Technologies AG SPP07N60CFD Datasheet HTML 3Page - Infineon Technologies AG SPP07N60CFD Datasheet HTML 4Page - Infineon Technologies AG SPP07N60CFD Datasheet HTML 5Page - Infineon Technologies AG SPP07N60CFD Datasheet HTML 6Page - Infineon Technologies AG SPP07N60CFD Datasheet HTML 7Page - Infineon Technologies AG SPP07N60CFD Datasheet HTML 8Page - Infineon Technologies AG SPP07N60CFD Datasheet HTML 9Page - Infineon Technologies AG Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 12 page
background image
SPP07N60CFD
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R thJC
-
-
1.5
K/W
R thJA
leaded
-
-
62
Soldering temperature, wave
soldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10 s
-
-
260
°C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
600
-
-
V
Avalanche breakdown voltage
V (BR)DS
V GS=0 V, I D=6.6 A
-
700
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=300 µA
3
4
5
Zero gate voltage drain current
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
-
0.6
-
µA
V DS=600 V, V GS=0 V,
T j=150 °C
-
630
-
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=4.6 A,
T j=25 °C
-
0.59
0.7
"
V GS=10 V, I D=4.6 A,
T j=150 °C
-
1.6
-
Gate resistance
R G
f =1 MHz, open drain
-
1.2
-
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=4.6 A
-
5.0
-
S
Values
Thermal resistance, junction -
ambient
Rev. 1.4
page 2
2009-11-27



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com