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IPT2006-CEB Datasheet(PDF) 2 Page - IP SEMICONDUCTOR CO., LTD.

Part # IPT2006-CEB
Description  High current density due to double mesa technology
PDF  4 Pages
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Manufacturer  IPS [IP SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.ipsemiconductor.com
Logo IPS - IP SEMICONDUCTOR CO., LTD.

IPT2006-CEB Datasheet(HTML) 2 Page - IP SEMICONDUCTOR CO., LTD.

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ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified)
2
STATIC CHARACTERISTICS
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j
– c)
Junction to case (AC)
1.3
℃/W
Symbol
Test Condition
Quadrant
IPT2006-xxB
Unit
BE
CE
DE
IGT
VD = 12V RL = 33
Ω
Tj = 25 ℃
I
– II – III
MAX
50
35
50
mA
VGT
I
– II – III
MAX
1.5
V
VGD
VD=VDRM, RL=3.3K
Ω,
Tj = 125 ℃
I
– II – III
MIN
0.2
V
IL
IG = 1.2 IGT, Tj = 125 ℃
I
– III
MAX
50
50
70
mA
II
100
60
80
IH
IT = 500mA Gate open
MAX
50
50
75
mA
dV/dt
VD = 67% VDRM gate open Tj = 125 ℃
MIN
400
250
500
V/us
(dI/dt)c
(dV/dt) c=0.1V/us Tj = 125 ℃
MIN
-
-
-
A/ms
(dV/dt) c=10V/us Tj = 125 ℃
-
-
-
Without snubber Tj = 125 ℃
-
18
11
Symbol
Test Conditions
Value (MAX)
Unit
VTM
ITM = 28A, t p = 380uS
Tj = 25 ℃
1.65
V
IDRM
VD = VDRM
Tj = 25 ℃
20
uA
IRRM
VR = VRRM
Tj = 125 ℃
3
mA
IPT2006-xxB
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com



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