MRF9100LR3 datasheet(2/12 Pages) FREESCALE

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RF Device Data

Freescale Semiconductor

MRF9100LR3 MRF9100LSR3

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

1 (Minimum)

Machine Model

M3 (Minimum)

Charge Device Model

C7 (Minimum)

Table 4. Electrical Characteristics (TC = 25°C, 50 ohm system unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

(VDS = 65 Vdc, VGS = 0 Vdc)

IDSS

—

μAdc

Zero Gate Voltage Drain Current

(VDS = 26 Vdc, VGS = 0 Vdc)

IDSS

—

μAdc

Gate-Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS

—

μAdc

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 500 μAdc)

VGS(th)

—

Vdc

Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 800 mAdc)

VGS(Q)

—

Vdc

Drain-Source On-Voltage

(VGS = 10 Vdc, ID = 2 Adc)

VDS(on)

—

0.19

0.5

Vdc

Dynamic Characteristics (1)

Reverse Transfer Capacitance

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Crss

—

1.0

—

Functional Tests (In Freescale Test Fixture)

Output Power, 1 dB Compression Point, CW

(VDD = 26 Vdc, IDQ = 800 mA, f = 960 MHz)

P1dB

100

110

—

Common-Source Amplifier Power Gain

(VDD = 26 Vdc, Pout = 100 W CW, IDQ = 800 mA,

f = 960 MHz)

Gps

—

Drain Efficiency

(VDD = 26 Vdc, Pout = 100 W CW, IDQ = 800 mA,

f = 960 MHz)

—

Input Return Loss

(VDD = 26 Vdc, Pout = 100 W CW, IDQ = 800 mA,

f1 = 921 MHz and 960 MHz,

f2 = 940 MHz)

IRL

—

-20

-10

—

Third Order Intermodulation Distortion

(VDD = 26 Vdc, Pout = 100 W PEP, IDQ = 800 mA,

f = Full GSM Band 921-960 MHz, Tone Spacing = 100 kHz)

IMD

—

-30

—

dBc

1. Part is internally matched both on input and output.

MRF9100LR3 Datasheet(PDF) 2 Page - Freescale Semiconductor, Inc

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