MRF21085LSR3 datasheet(3/11 Pages) FREESCALE

Part #	MRF21085LSR3

Description	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

PDF	11 Pages

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Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

Direct Link	http://www.freescale.com

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3 / 11 page

MRF21085LSR3

RF Device Data

Freescale Semiconductor

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests (In Freescale Test Fixture, 50 ohm system) (continued)

Two-Tone Common-Source Amplifier Power Gain

(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA,

f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)

Gps

—

13.6

—

Two-Tone Drain Efficiency

(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA,

f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)

—

Two-Tone Intermodulation Distortion

(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA,

f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)

IMD

—

-31

—

dBc

Input Return Loss

(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA,

f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)

IRL

—

-12

—

Pout, 1 dB Compression Point

(VDD = 28 Vdc, IDQ = 1000 mA, f = 2170 MHz)

P1dB

—

100

—

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