Replaced by MHVIC2114NR2. There are no form, fit or function changes with this part

replacement. N suffix indicates RoHS compliant part.

MHVIC2114R2

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RF Device Data

Freescale Semiconductor

RF LDMOS Wideband Integrated

Power Amplifier

The MHVIC2114R2 wideband integrated circuit is designed for base station

applications. It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS

IC technology and integrates a multi-stage structure. Its wideband On-Chip

matching design makes it usable from 1600 to 2600 MHz. The linearity

performances cover all modulation formats for cellular applications: CDMA and

W -CDMA. The device is in a PFP - 16 flat pack package that provides

excellent thermal performance through a solderable backside contact.

Final Application

Power Gain — 32 dB

IMD — -30 dBc

Driver Application

3GPP Test Model 1, Measured in a 3.84 MHz BW @ 5 MHz Offset, 64

DTCH, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 32 dB

ACPR — -58 dBc

• P1dB = 14 Watts, Gain Flatness = 0.2 dB from 2110 to 2170 MHz

• Capable of Handling 3:1 VSWR, @ 27 Vdc, 2140 MHz, 15 Watts CW

Output Power

• Characterized with Series Equivalent Large-Signal Impedance Parameters

and Common Source Scattering Parameters

• On-Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)

• Integrated Temperature Compensation with Enable/Disable Function

• Integrated ESD Protection

• In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.

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(Top View)

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N.C.

N.C.

N.C.

Quiescent Current

Temperature Compensation

Note: Exposed backside flag is source

terminal for transistors.

Figure 1. Block Diagram

Figure 2. Pin Connections

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Document Number: MHVIC2114R2

Rev. 4, 8/2006

Freescale Semiconductor

Technical Data

MHVIC2114R2

CASE 978-03

PFP -16

2100 MHz, 27 V, 23 dBm

SINGLE W-CDMA

RF LDMOS WIDEBAND

INTEGRATED POWER AMPLIFIER

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© Freescale Semiconductor, Inc., 2006. All rights reserved.