MRF21045LR3 MRF21045LSR3

1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for W--CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

t i o n s . To b e u s e d i n C l a s s A B f o r P C N -- P C S / c e l l u l a r r a d i o a n d W L L

applications.

•

f = 2157.5 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels

measured over 3.84 MHz Bandwidth at f1 --5 MHz and f2 +5 MHz,

Distortion Products measured over a 3.84 MHz Bandwidth at f1 --10 MHz

and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.

Output Power — 10 Watts Avg.

Efficiency — 23.5%

Gain — 15 dB

IM3 — --37.5 dBc

ACPR — --41 dBc

•

Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW

Output Power

Features

•

Internally Matched for Ease of Use

•

High Gain, High Efficiency and High Linearity

•

Integrated ESD Protection

•

Designed for Maximum Gain and Insertion Phase Flatness

•

Excellent Thermal Stability

•

Characterized with Series Equivalent Large--Signal Impedance Parameters

•

Low Gold Plating Thickness on Leads, 40µ″ Nominal.

•

RoHS Compliant

•

In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

--0.5, +65

Vdc

Gate--Source Voltage

--0.5, +15

Vdc

Derate above 25°C

105

0.60

W

W/°C

Storage Temperature Range

--65 to +150

°

C

Case Operating Temperature

150

°

C

Operating Junction Temperature

200

°

C

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

1.65

°

C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

1 (Minimum)

Machine Model

M2 (Minimum)

1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

Document Number: MRF21045

Rev. 12, 10/2008

Freescale Semiconductor

Technical Data

MRF21045LR3

MRF21045LSR3

2110--2170 MHz, 45 W, 28 V

LATERAL N--CHANNEL

RF POWER MOSFETs

CASE 465E--04, STYLE 1

NI--400

MRF21045LR3

CASE 465F--04, STYLE 1

NI--400S

MRF21045LSR3

©

Freescale Semiconductor, Inc., 2008. All rights reserved.