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M48Z2M1V Datasheet(PDF) 11 Page - STMicroelectronics

Part # M48Z2M1V
Description  5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER® SRAM
PDF  20 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M48Z2M1V Datasheet(HTML) 11 Page - STMicroelectronics

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M48Z2M1Y, M48Z2M1V
Operation modes
Doc ID 5135 Rev 5
11/20
2.4
VCC noise and negative going transients
ICC transients, including those produced by output switching, can produce voltage
fluctuations, resulting in spikes on the VCC bus. These transients can be reduced if
capacitors are used to store energy which stabilizes the VCC bus. The energy stored in the
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1 µF (as shown in
Figure 8) is recommended in order to provide the needed filtering.
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on VCC that drive it to values below VSS by as much as
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, it is recommended to connect a
schottky diode from VCC to VSS (cathode connected to VCC, anode to VSS). Schottky diode
1N5817 is recommended for through hole and MBRS120T3 is recommended for surface
mount.
Figure 8.
Supply voltage protection
AI02169
VCC
0.1µF
DEVICE
VCC
VSS



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