M48Z129Y, M48Z129V

Description

Doc ID 5716 Rev 7

5/20

1

Description

organized as 131,072 words by 8 bits. The device combines an internal lithium battery, a

CMOS SRAM and a control circuit in a plastic 32-pin DIP module. The M48Z129Y/V directly

replaces industry standard 128 K x 8 SRAM. It also provides the non-volatility of FLASH

without any requirement for special WRITE timing or limitations on the number of WRITEs

that can be performed.

Figure 1.

Logic diagram

Table 1.

Signal names

A0-A16

Address inputs

DQ0-DQ7

Data inputs / outputs

E

Chip enable

G

Output enable

W

WRITE enable

RST

Reset output (open drain)

BL

Battery low output (open drain)

Supply voltage

Ground

AI02309

17

A0-A16

DQ0-DQ7

VCC

M48Z129Y

M48Z129V

G

VSS

8

E

W

RST

BL