2SA1925

2010-03-09

1

TOSHIBA Transistor Silicon PNP Triple Diffused Type

2SA1925

High-Voltage Switching Applications

Characteristics

Symbol

Rating

Unit

Collector-base voltage

−400

V

Collector-emitter voltage

−400

V

Emitter-base voltage

−7

V

DC

−0.5

Collector current

Pulse

−1

A

Base current

−0.25

A

Collector power dissipation

1.3

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-8M1A

Weight: 0.55 g (typ.)