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2SC3474 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SC3474 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 5 page ![]() 2SC3474 2005-02-01 1 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Switching Applications Solenoid Drive Applications • High DC current gain: hFE = 500 (min) (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 7 V Collector current IC 2 A Base current IB 0.5 A Ta = 25°C 1.0 Collector power dissipation Tc = 25°C PC 20 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Industrial Applications Unit: mm JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) |
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