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2SC4409 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # 2SC4409
Description  Power Amplifier Applications Power switching applications
PDF  4 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC4409 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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2SC4409
2004-07-07
2
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 80 V, IE = 0
⎯
⎯
0.1
µA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
⎯
⎯
0.1
µA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
50
⎯
⎯
V
hFE (1)
VCE = 2 V, IC = 100 mA
120
⎯
400
DC current gain
hFE (2)
VCE = 2 V, IC = 1.5 A
40
⎯
⎯
Collector-emitter saturation voltage
VCE (sat)
IC = 1 A, IB = 0.05 A
⎯
⎯
0.5
V
Base-emitter saturation voltage
VBE (sat)
IC = 1 A, IB = 0.05 A
⎯
⎯
1.2
V
Transition frequency
fT
VCE = 2 V, IC = 100 mA
⎯
100
⎯
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
⎯
14
⎯
pF
Turn-on time
ton
⎯
0.1
⎯
Storage time
tstg
⎯
0.5
⎯
Switching time
Fall time
tf
⎯
0.1
⎯
µs
Marking
Output
IB1
30 V
Input
IB1
20
µs
IB1 = −IB2 = 0.05 A,
Duty cycle <= 1%
IB2
IB2
K
A
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.



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