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2SC4541 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SC4541 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page ![]() 2SC4541 2004-07-07 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 80 V, IE = 0 ― ― 0.1 µA Emitter cut-off current IEBO VEB = 6 V, IC = 0 ― ― 0.1 µA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 50 ― ― V hFE (1) VCE = 2 V, IC = 100 mA 120 ― 400 DC current gain hFE (2) VCE = 2 V, IC = 2 A 40 ― ― Collector-emitter saturation voltage VCE (sat) IC = 1.5 A, IB = 75 mA ― ― 0.5 V Base-emitter saturation voltage VBE (sat) IC = 1.5 A, IB = 75 mA ― ― 1.2 V Transition frequency fT VCE = 2 V, IC = 100 mA ― 100 ― MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 20 ― pF Turn-on time ton ― 0.1 ― Storage time tstg ― 0.5 ― Switching time Fall time tf ― 0.1 ― µs Marking OUTPUT IB1 30 V INPUT IB1 20 µs IB1 = −IB2 = 75 mA, DUTY CYCLE ≤ 1% IB2 IB2 K D Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. |
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