2N7002VC datasheet(1/3 Pages) DIODES

Part #	2N7002VC

Description	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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1 / 3 page

2N7002VC/VAC

Document number: DS30639 Rev. 5 - 2

1 of 3

www.diodes.com

October 2007

2N7002VC/VAC

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

•

Dual N-Channel MOSFET

•

Low On-Resistance

•

Low Gate Threshold Voltage

•

Low Input Capacitance

•

Fast Switching Speed

•

Low Input/Output Leakage

•

Ultra-Small Surface Mount Package

•

Lead Free By Design/RoHS Compliant (Note 3)

•

“Green” Device (Note 4)

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: SOT-563

•

Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020C

•

Terminal Connections: See Diagram (Note 1)

•

Terminals: Finish - Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

•

Marking Information: See Page 2

•

Ordering Information: See Page 2

•

Weight: 0.003 grams (approximate)

SOT-563

S

1

D

1

D

2

S

2

G

1

G

2

G

1

D

1

D

2

S

2

S

1

G

2

TOP VIEW

2N7002VC

(ASK Marking Code)

2N7002VAC

(AYK Marking Code)

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

60

V

Drain-Gate Voltage RGS ≤ 1.0MΩ

VDGR

60

V

Gate-Source Voltage (Note 2)

Continuous

Pulsed

VGSS

±20

±40

V

Drain Current (Note 2)

Continuous

ID

280

mA

Drain Current (Note 2)

Pulsed

IDM

1.5

A

Thermal Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Units

Total Power Dissipation

Pd

150

mW

Thermal Resistance, Junction to Ambient

RθJA

833

°C/W

Operating and Storage Temperature Range

Tj, TSTG

-55 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

BVDSS

60

70

⎯

V

VGS = 0V, ID = 10mA

Zero Gate Voltage Drain Current

@ TC = 25°C

@ TC = 125°C

IDSS

⎯

1.0

500

µA

VDS = 60V, VGS = 0V

Gate-Body Leakage

IGSS

⎯

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTIC (Note 5)

Gate Threshold Voltage

VGS(th)

1.0

⎯

2.5

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS (ON)

⎯

7.5

13.5

Ω

VGS = 5V, ID = 0.05A,

VGS = 10V, ID = 0.5A, Tj = 125°C

On-State Drain Current

ID(ON)

0.5

1.0

⎯

A

VGS = 10V, VDS = 7.5V

Forward Transconductance

gFS

80

⎯

mS

VDS = 10V, ID = 0.2A

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss

⎯

50

pF

Output Capacitance

Coss

⎯

25

pF

Reverse Transfer Capacitance

Crss

⎯

5.0

pF

VDS = 25V, VGS = 0V, f = 1.0MHz

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

⎯

20

ns

Turn-Off Delay Time

tD(OFF)

⎯

20

ns

VDD = 30V, ID = 0.2A, RL = 150Ω,

VGEN = 10V, RGEN = 25Ω

Notes:

1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).

2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

3. No purposefully added Lead.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Short duration pulse test used to minimize self-heating effect.

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