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DMN601WK Datasheet(PDF) 1 Page - Diodes Incorporated |
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DMN601WK Datasheet(HTML) 1 Page - Diodes Incorporated |
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1 / 5 page  DMN601WK Document number: DS30653 Rev. 4 - 2 1 of 5 www.diodes.com April 2009 © Diodes Incorporated DMN601WK N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance: RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected Up To 2kV • "Green" Device (Note 4) Mechanical Data • Case: SOT-323 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.006 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Drain Current (Note 1) Continuous Pulsed (Note 3) ID 300 800 mA Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Total Power Dissipation (Note 1) PD 200 mW Thermal Resistance, Junction to Ambient RθJA 625 °C/W Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS 60 ⎯ ⎯ V VGS = 0V, ID = 10μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1.0 μA VDS = 60V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±10 μA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) 1.0 1.6 2.5 V VDS = 10V, ID = 1mA Static Drain-Source On-Resistance RDS(ON) ⎯ ⎯ ⎯ ⎯ 2.0 3.0 Ω VGS = 10V, ID = 0.5A VGS = 4.5V, ID = 0.2A Forward Transfer Admittance |Yfs| 80 ⎯ ⎯ ms VDS = 10V, ID = 0.2A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ ⎯ 50 pF VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss ⎯ ⎯ 25 pF Reverse Transfer Capacitance Crss ⎯ ⎯ 5.0 pF Notes: 1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Pulse width ≤10μS, Duty Cycle ≤1%. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Short duration pulse test used to minimize self-heating effect. SOT-323 TOP VIEW TOP VIEW Pin Out Configuration GS D Source EQUIVALENT CIRCUIT Gate Protection Diode Gate Drain ESD PROTECTED TO 2kV Please click here to visit our online spice models database. |
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