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DMN2005K Datasheet(PDF) 1 Page - Diodes Incorporated |
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DMN2005K Datasheet(HTML) 1 Page - Diodes Incorporated |
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1 / 4 page  DMN2005K Document number: DS30734 Rev. 5 - 2 1 of 4 www.diodes.com November 2007 © Diodes Incorporated DMN2005K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Very Low Gate Threshold Voltage, 0.9V Max. • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • "Green" Device (Note 4) • ESD Protected Gate Mechanical Data • Case: SOT-23 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminal Connections: See Diagram • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 3 • Ordering & Date Code Information: See Page 3 • Weight: 0.008 grams (approximate) SOT-23 Source Body Diode Gate Gate Protection Diode Drain G S D ESD protected TOP VIEW TOP VIEW Equivalent Circuit Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±10 V Drain Current per element (Note 1) Continuous Pulsed (Note 3) ID 300 600 mA Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Total Power Dissipation (Note 1) PD 350 mW Thermal Resistance, Junction to Ambient RθJA 357 °C/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS 20 ⎯ ⎯ V VGS = 0V, ID = 100μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 10 μA VDS = 17V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±5 μA VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) 0.53 ⎯ 0.9 V VDS = VGS, ID = 100μA Static Drain-Source On-Resistance RDS (ON) ⎯ ⎯ ⎯ ⎯ 3.5 1.7 Ω VGS = 1.8V, ID = 200mA VGS = 2.7V, ID = 200mA Forward Transfer Admittance ⏐Yfs⏐ 40 ⎯ ⎯ mS VDS = 3V, ID = 10A Notes: 1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Pulse width ≤10μS, Duty Cycle ≤1%. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Short duration pulse test used to minimize self-heating effect. |
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