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MMDT3946LP4 Datasheet(PDF) 2 Page - Diodes Incorporated |
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MMDT3946LP4 Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 5 page  DS30822 Rev. 4 - 2 2 of 5 www.diodes.com MMDT3946LP © Diodes Incorporated Electrical Characteristics, NPN 3904 Section @TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage V(BR)CBO 60 ⎯ V IC = 10μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 ⎯ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ⎯ V IE = 10μA, IC = 0 Collector Cutoff Current ICEX ⎯ 50 nA VCE = 30V, VEB(OFF) = 3.0V Base Cutoff Current IBL ⎯ 50 nA VCE = 30V, VEB(OFF) = 3.0V ON CHARACTERISTICS (Note 5) DC Current Gain hFE 40 70 100 60 30 ⎯ ⎯ 300 ⎯ ⎯ ⎯ IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.20 0.30 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Base-Emitter Saturation Voltage VBE(SAT) 0.65 ⎯ 0.85 0.95 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo ⎯ 4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Current Gain-Bandwidth Product fT 300 ⎯ MHz VCE = 20V, IC = 20mA, f = 100MHz SWITCHING CHARACTERISTICS Delay Time td ⎯ 35 ns Rise Time tr ⎯ 35 ns VCC = 3.0V, IC = 10mA, VBE(off) = -0.5V, IB1 = 1.0mA Storage Time ts ⎯ 200 ns Fall Time tf ⎯ 50 ns VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA Electrical Characteristics, PNP 3906 Section @TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage V(BR)CBO -40 ⎯ V IC = -10μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -40 ⎯ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ⎯ V IE = -10μA, IC = 0 Collector Cutoff Current ICEX ⎯ -50 nA VCE = -30V, VEB(OFF) = -3.0V Base Cutoff Current IBL ⎯ -50 nA VCE = -30V, VEB(OFF) = -3.0V ON CHARACTERISTICS (Note 5) DC Current Gain hFE 60 80 100 60 30 ⎯ ⎯ 300 ⎯ ⎯ ⎯ IC = -100µA, VCE = -1.0V IC = -1.0mA, VCE = -1.0V IC = -10mA, VCE = -1.0V IC = -50mA, VCE = -1.0V IC = -100mA, VCE = -1.0V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -0.25 -0.40 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA Base-Emitter Saturation Voltage VBE(SAT) -0.65 ⎯ -0.85 -0.95 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo ⎯ 4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0 Current Gain-Bandwidth Product fT 250 ⎯ MHz VCE = -20V, IC = -10mA, f = 100MHz SWITCHING CHARACTERISTICS Delay Time td ⎯ 35 ns Rise Time tr ⎯ 35 ns VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA Storage Time ts ⎯ 225 ns Fall Time tf ⎯ 75 ns VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA Notes: 5. Short duration test pulse used to minimize self-heating effect. |
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