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DMN5L06K Datasheet(PDF) 1 Page - Diodes Incorporated |
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DMN5L06K Datasheet(HTML) 1 Page - Diodes Incorporated |
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1 / 4 page  DMN5L06K Document number: DS30929 Rev. 5 - 2 1 of 4 www.diodes.com January 2009 © Diodes Incorporated DMN5L06K N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance • Very Low Gate Threshold Voltage (1.0V max) • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected Up To 2kV • "Green" Device (Note 4) • Qualified to AEC-Q101 standards for High Reliability Mechanical Data • Case: SOT-23 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Marking Information: See Page 4 • Ordering Information: See Page 4 • Weight: 0.008 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain Source Voltage VDSS 50 V Gate-Source Voltage VGSS ±20 V Drain Current (Note 1) Continuous Pulsed (Note 3) ID 300 800 mA Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Total Power Dissipation (Note 1) PD 350 mW Thermal Resistance, Junction to Ambient RθJA 357 °C/W Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS 50 ⎯ ⎯ V VGS = 0V, ID = 10μA Zero Gate Voltage Drain Current @ TC = 25°C IDSS ⎯ ⎯ 60 nA VDS = 50V, VGS = 0V Gate-Body Leakage IGSS ⎯ ⎯ 1 500 50 μA nA nA VGS = ±12V, VDS = 0V VGS = ±10V, VDS = 0V VGS = ±5V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) 0.49 ⎯ 1.0 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 3.0 2.5 2.0 Ω VGS = 1.8V, ID = 50mA VGS = 2.5V, ID = 50mA VGS = 5.0V, ID = 50mA On-State Drain Current ID(ON) 0.5 1.4 ⎯ A VGS = 10V, VDS = 7.5V Forward Transconductance |Yfs| 200 ⎯ ⎯ mS VDS =10V, ID = 0.2A Source-Drain Diode Forward Voltage VSD 0.5 ⎯ 1.4 V VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ ⎯ 50 pF VDS = 25V, VGS = 0V f = 1.0MHz Output Capacitance Coss ⎯ ⎯ 25 pF Reverse Transfer Capacitance Crss ⎯ ⎯ 5.0 pF Notes: 1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Pulse width ≤10mS, Duty Cycle ≤1%. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Short duration pulse test used to minimize self-heating effect. SOT-23 TOP VIEW ESD protected up to 2kV Source EQUIVALENT CIRCUIT Gate Protection Diode Gate Drain TOP VIEW D G S Please click here to visit our online spice models database. |
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